 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| A Product Line of Diodes Incorporated ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V(BR)DSS -20V RDS(on) 0.025 ID -8.0A Features and Benefits * * * * * High pulse current handling in linear mode Low on-resistance Fast switching speed Low gate drive Low profile SOIC package Description and Applications This high density MOSFET utilizes a unique structure that combines the benefits of a low on-resistance with fast switching speed. This makes it ideal for high efficiency, low voltage power management applications. Compared to trenchFET technology, this MOSFET structure has an intrinsically higher pulse current handling capability in linear mode. * * * * * Inrush protection circuits DC-DC Converters Power management functions Disconnect switches Motor control Mechanical Data * * * * * * Case: SO-8 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See diagram below Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (approximate) SO-8 D G S Top View Top View Equivalent Circuit Ordering Information Product ZXM66P02N8TA Notes: (Note 1) Marking See below Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 500 1. For packaging details, go to our website. Marking Information ZXM 66P02 YYWW ZXM = Product Type Marking Code, Line 1 66P02 = Product Type Marking Code, Line 2 YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52) ZXM66P02N8 Document Number DS31965 Rev. 2 - 2 1 of 5 www.diodes.com October 2009 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXM66P02N8 Maximum Ratings Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 4.5V (Note 3) TA = 70C (Note 3) (Note 2) (Note 4) (Note 3) (Note 4) @TA = 25C unless otherwise specified Symbol VDSS VGS ID IDM IS ISM Value -20 12 -8.0 -6.5 -6.4 -28 -4.15 -28 Unit V V A A A A Characteristic Pulsed Drain current Continuous Source current (Body diode) Pulsed Source current (Body diode) Thermal Characteristics @TA = 25C unless otherwise specified Characteristic Power dissipation Linear derating factor Thermal Resistance, Junction to Ambient Operating and storage temperature range Notes: Symbol (Note 2) PD (Note 3) (Note 2) (Note 3) RJA TJ, TSTG Value 1.56 12.5 2.5 20 80 50 -55 to 150 Unit W mW/C C/W C 2. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 3. Same as note (3), except the device is measured at t 10 sec. 4. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 5) Forward Transconductance (Notes 5 & 6) Diode Forward Voltage (Note 5) Reverse recovery time (Note 6) Reverse recovery charge (Note 6) DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 7) Gate-Source Charge (Note 7) Gate-Drain Charge (Note 7) Turn-On Delay Time (Note 7) Turn-On Rise Time (Note 7) Turn-Off Delay Time (Note 7) Turn-Off Fall Time (Note 7) Notes: Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gfs VSD trr Qrr Ciss Coss Crss Qg Qgs Qgd tD(on) tr tD(off) tf Min -20 -0.7 Typ 13.3 23.1 12.2 2068 1038 506 43.3 3.5 21.3 14.0 44.3 118.4 98.4 Max -1 -100 0.025 0.045 0.95 Unit V A nA V S V ns nC pF pF pF nC nC nC ns ns ns ns Test Condition ID = -250A, VGS = 0V VDS = -16V, VGS = 0V VGS = 12V, VDS = 0V ID = -250A, VDS = VGS VGS = -4.5V, ID = -3.2A VGS = -2.5V, ID = -2.7A VDS = -10V, ID = -3.2A IS = -3.2A, VGS = 0V IF = -3.2A, di/dt = 100A/s VDS = -15V, VGS = 0V F = 1MHz VGS = -4.5V, VDS = -10V, ID = -3.2A VDD = -10V, VGS = -5V ID = -3.2A, RG = 6.0 5. Measured under pulsed conditions. Pulse width 300s; duty cycle 2% 6. For design aid only, not subject to production testing. 7. Switching characteristics are independent of operating junction temperatures. ZXM66P02N8 Document Number DS31965 Rev. 2 - 2 2 of 5 www.diodes.com October 2009 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXM66P02N8 Typical Characteristics T = 25C 10V 4.5V 2.5V 10V 4.5V -ID Drain Current (A) -ID Drain Current (A) 10 2.5V T = 150C 2V 1.5V -VGS 10 2V 1 1 1.5V -VGS 0.1 1V 0.1 0.01 -VDS Drain-Source Voltage (V) 0.1 1 0.1 -VDS Drain-Source Voltage (V) 1 10 Output Characteristics 1.6 Normalised RDS(on) and VGS(th) Output Characteristics VGS = -4.5V -ID Drain Current (A) 1.4 1.2 1.0 0.8 1 T = 150C ID = - 3.2A RDS(on) 0.1 T = 25C 0.01 -VDS = 10V VGS = VDS VGS(th) 0.6 -50 0 ID = -250uA 1E-3 500.0m 1.0 1.5 2.0 50 100 150 -VGS Gate-Source Voltage (V) Tj Junction Temperature (C) Typical Transfer Characteristics RDS(on) Drain-Source On-Resistance () -VGS 1.5V 2V T = 25C Normalised Curves v Temperature -ISD Reverse Drain Current (A) 10 1 1 T = 150C 0.1 2.5V 0.1 T = 25C 4.5V 10V 0.01 0.01 0.1 1E-3 1 10 0.2 0.4 0.6 0.8 1.0 On-Resistance v Drain Current -ID Drain Current (A) -VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage ZXM66P02N8 Document Number DS31965 Rev. 2 - 2 3 of 5 www.diodes.com October 2009 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXM66P02N8 Package Outline Dimensions DIM Inches Min. Max. 0.069 0.010 0.197 0.244 0.157 0.050 Millimeters Min. 1.35 0.10 4.80 5.80 3.80 0.40 Max. 1.75 0.25 5.00 6.20 4.00 1.27 DIM Inches Min. Max. Millimeters Min. Max. 0.51 0.25 8 0.50 - A A1 D H E L 0.053 0.004 0.189 0.228 0.150 0.016 e b c h - 0.050 BSC 0.013 0.008 0 0.010 0.020 0.010 8 0.020 - 1.27 BSC 0.33 0.19 0 0.25 - Suggested Pad Layout 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.27 0.050 mm inches ZXM66P02N8 Document Number DS31965 Rev. 2 - 2 4 of 5 www.diodes.com October 2009 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXM66P02N8 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. 2. B. are intended to implant into the body, or support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2009, Diodes Incorporated www.diodes.com ZXM66P02N8 Document Number DS31965 Rev. 2 - 2 5 of 5 www.diodes.com October 2009 (c) Diodes Incorporated |
Price & Availability of ZXM66P02N8
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |